Optimization of the multi-mem response of topotactic redox La_1/2Sr_1/2Mn_1/2Co_1/2O_3?<i>x</i>

Memristive systems emerge as strong candidates for the implementation of resistive random access memories and neuromorphic computing devices, they can mimic electrical analog behavior or biological synapses. In addition, complementary functionalities, such memcapacitance, could significantly improve performance bio-inspired devices in key issues, energy consumption. However, physics mem is not fully understood so far, hampering their large-scale devices. Perovskites that undergo topotactic transitions redox reactions show improved systems, compared to standard perovskites. this paper, we analyze different strategies optimize multi-mem (memristive memcapacitive) La1/2Sr1/2Mn1/2Co1/2O3?x (LSMCO) films grown on Nb:SrTiO3. We explored with crystallinities (from amorphous epitaxial LSMCO), out-of-plane orientation [(001) (110)], stimulated either voltage current pulses. found an optimum memory response (110) LSMCO Under these conditions, system efficiently exchanges oxygen environment minimizing, at same time, self-heating effects trigger nanostructural chemical changes affect device integrity performance. Our work contributes pave way integration oxide-based interfaces multiple architectures, order exploit memristive memcapacitive properties data storage computation.